Optical properties of Si-DOPED AlxGa1-xN/AlyGa1-yN (x=0. 24-0. 53, y-0. 11) multi-quantum-well structures

Materials Research Society Symposium - Proceedings

Volumn 537, Issue , 1999, Pages

  Hirayama, H ^a   Aoyagi, Y ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; ULTRAVIOLET RADIATION;

ALUMINUM GALLIUM NITRIDE; SILICON DOPING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033350401     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

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