Preparation and crystallization of tin-doped and undoped amorphous indium oxide films deposited by sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 A, 1999, Pages 5224-5226

  Song, Pung Keun ^a   Akao, Hirotaka ^b   Kamei, Masayuki ^a   Shigesato, Yuzo ^b   Yasui, Itaru ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

Author keywords

Amorphous tin doped indium oxide; Crystallization; Dc magnetron sputtering; Electrical properties; Low substrate temperature

Indexed keywords

AMORPHOUS FILMS; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC PROPERTIES; FILM PREPARATION; HALL EFFECT; MAGNETRON SPUTTERING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPUTTER DEPOSITION; TIN; X RAY CRYSTALLOGRAPHY;

INDIUM TIN OXIDE;

SEMICONDUCTING FILMS;

EID: 0033349512     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5224     Document Type: Article

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