Control of cleaning performance of an ammonia and hydrogen peroxide mixture (APM) on the basis of a kinetic reaction model

IEEE Transactions on Semiconductor Manufacturing

Volumn 12, Issue 3, 1999, Pages 288-294

  Yamamoto, Kenichi ^a   Nakamura, Akinobu ^a   Hase, Ushio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ETCHING; HYDROGEN PEROXIDE; OXIDATION; REACTION KINETICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SURFACE CLEANING; SURFACE ROUGHNESS;

CHEMICAL EQUILIBRIUM ANALYSIS; PARTICLE REMOVAL EFFICIENCY; SURFACE MICROROUGHNESS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0033346762     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.778192     Document Type: Article

References (15)

1. W. Kern and D. A. Puotinen, "Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology," RCA Rev., vol. 31, pp. 187-206, June 1970.
2. 4 insulating films in ammonia hydrogen-peroxide cleaning process," in Ext. Abstr. 163rd Spring Meeting Electrochem. Soc., May 1983, vol. 83-1, pp. 221-222.
3. 2 cleaning solutions," J. Electrochem. Soc., vol. 137, no. 4, pp. 1239-1243, Apr. 1990.
4. M. Miyashita, T. Tusga, K. Makihara, and T. Ohmi, "Dependence of surface microroughness of CZ, FZ, and EPI wafers on wet cleaning processing," J. Electrochem. Soc., vol. 139, no. 8, pp. 2133-2142, Aug. 1992.
5. H. Kobayashi, J. Ryuta, T. Shingyouji, and Y. Shimanuki, "Study of Si etch rate in various composition of SC1 solution," Jpn. J. Appl. Phys., vol. 32, pp. L45-L47, Jan. 1993.
6. P. Boelen, I. Kashkoush, R. Novak, T. Lardin, and F. Tardif, "Optimization of dilute SC1," in Meeting Abst. Joint Meeting ECS and ISE, Aug. 1997, pp. 2149-2150.
7. M. Itano, F. W. Kern, Jr., M. Miyashita, and T. Ohmi, "Particle removal from silicon wafer surface in wet cleaning process," IEEE Trans. Semiconduct. Manufact., vol. 6, pp. 258-267, Aug. 1993.
8. S. Verhaverbeke, J. W. Parker, and C. F. McConnell, "Quantitative model for the SC-1 cleaning," in Proc. Electrochem Soc., 1996, vol. 95-20, pp. 39-48.
9. - in SC-1 cleaning solutions," in Symp. Proc. Mater. Res. Soc., 1997, vol. 477, pp. 47-56.
10. K. Yamamoto, A. Nakamura, and U. Hase, "How do we apply dilute APM to the wet cleaning process in VLSI manufacturing?," in Proc. 7th ISSM, Oct. 1998, pp. 121-124.
11. 2 decomposition and its impact on silicon surface roughening and gate oxide integrity," Jpn. J. Appl. Phys., vol. 34, pp. 727-731, Feb. 1995.
12. 2 interface microroughness on the performance and reliability of scaled MOSFET's," in Proc. Int. Conf. Advanced Microelectronic Devices and Processing, 1994, pp. 425-430.
13. J. S. Jeon and S. Raghavan, "Electrochemical aspects of etching and passivation of silicon in alkaline solutions," in Symp. Proc. Mater. Res. Soc., 1995, vol. 386, pp. 63-68.
14. H. Seidal, L. Csepregi, A. Heuberger, and H. Baumgärtel, "Anisotropic etching of crystalline silicon in alkaline solutions," J. Electrochm. Soc., vol. 137, no. 11, pp. 3612-3626, Nov. 1990.
15. M. Itano, T. Kezuka, M. Ishii, T. Unemoto, M. Kubo, and T. Ohmi, "Minimization of particle contamination during wet processing of Si wafers," J. Electrochm. Soc., vol. 142, no. 3, pp. 971-978, Mar. 1995.