The effect of post-anodization chemical etching on porous silicon investigated by means of photoluminescence and IR spectroscopy

Materials Research Society Symposium - Proceedings

Volumn 560, Issue , 1999, Pages 157-162

  Uehara, Nobutomo ^a   Yamazaki, Tetsuya ^a   Kobayashi, Akiharu ^a   Fujihara, Shinji ^a   Ohmukai, Masato ^a   Tsutsumi, Yasuo ^a  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CORRELATION METHODS; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SPECTRUM ANALYSIS;

CHEMICAL ETCHING; POST ANODIZATION EFFECT;

POROUS SILICON;

EID: 0033346257     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-560-157     Document Type: Article

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