Scanning tunneling spectroscopy of individual C60 molecules adsorbed on Si(111)-7×7 surface

Surface Science

Volumn 442, Issue 2, 1999, Pages

  Wang, Haiqian ^a   Zeng, Changgan ^a   Li, Qunxiang ^a   Wang, Bing ^a   Yang, Jinlong ^a   Hou, J G ^a   Zhu, Qingshi ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CHEMICAL BONDS; ELECTRONIC DENSITY OF STATES; SCANNING TUNNELING MICROSCOPY; SILICON;

SCANNING TUNNELING SPECTROSCOPY;

FULLERENES;

EID: 0033343543     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00977-2     Document Type: Article

References (24)

1. Wang X.D., Hashizume T., Shinohara H., Saito Y., Nishina Y., Sakura T. Jpn. J. Appl. Phys. 31:1992;L983.
2. Chen D., Chen J., Sarid D. Phys. Rev. B. 50:1994;10905.
3. Chen D., Sarid D. Phys. Rev. B. 49:1994;7612.
4. Li Y.Z., Chander M., Patrin J.C., Weaver J.H. Phys. Rev. B. 45:1992;13837.
5. Yao X., Ruskell T.G., Workman R.K., Sarid D., Chen D. Surf. Sci. 366:1996;L743.
6. Xu H., Chen D.M., Creager W.N. Phys. Rev. B. 50:1994;8454.
7. Fujikawa Y., Saiki K., Koma A. Phys. Rev. B. 56:1997;12124.
8. Yamaguchi T., Miyoshi S. Surf. Sci. 357-358:1996;283.
9. Suto S., Sakamoto K., Wakita T. Phys. Rev. B. 56:1997;7439.
10. Moriarty P., Upward M.D., Dunn A.W., Ma Y.-R., Beton P.H. Phys. Rev. B. 57:1998;362.
11. Sakamoto K., Harada M., Kondo D. Phys. Rev. B. 58:1998;13951.
12. Janzen O., Mönch W. J. Phys.: Condens. Matter. 11:1999;L111.
13. Altman E.I., Colton R.J. Phys. Rev. B. 48:1993;18244.
14. Johasson M.K.-J., Maxwell A.J., Gray S.M., Brühwiler P.A., Johasson L.S.O. Surf. Sci. 397:1998;314.
15. Takayanagi K., Tanishire Y., Takahashi M., Takahishi S. J. Vac. Sci. Technol. A. 3:1985;1502.
16. Hamers R.J., Tromp R.M., Demuth J.E. Phys. Rev. Lett. 56:1986;1972.
17. Qian G.-X., Chadi D.J. Phys. Rev. B. 35:1987;1288.
18. Feestra R.M., Stroscio J.A., Tersoff J., Fein A.P. Phys. Rev. Lett. 58:1987;1192.
19. Saito S., Oshiyama A. Phys. Rev. Lett. 66:1991;2637.
20. Guo J., Ellis D.E., Lam D.J. Chem. Phys. Lett. 176:1991;203.
21. Hou J.G., Yang J.L., Wang H.Q., Li Q.X., Zeng C.G., Lin H., Wang B., Chen D.M., Zhu Q.S. Phys. Rev. Lett. 83:1999;3001.
22. Von Barth U., Hedin L. J. Phys. C. 5:1972;1629.
23. Moruzzi V.L., Janak J.F., Williams A.R. Calculated Electronic Properties of Metals. 1978;Pergamon Press, New York.
24. Maxwell A.J., Brühwiler P.A., Arvanitis D., Hasselström J. Phys. Rev. B. 57:1998;7312. and references therein.