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Volumn 537, Issue , 1999, Pages

Absorption coefficient and refractive index of GaN, AIN and AlGaN alloys

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ENERGY GAP; OPTICAL VARIABLES MEASUREMENT; OPTOELECTRONIC DEVICES; REFRACTIVE INDEX; SAPPHIRE; SEMICONDUCTOR DEVICE MANUFACTURE; VAPOR PHASE EPITAXY;

EID: 0033340808     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (14)

References (19)
  • 3
    • 0030410873 scopus 로고    scopus 로고
    • Progress and Prospects of Group III-V Nitride Semiconductors
    • S. N. Mohammad and H. Morkoc, "Progress and Prospects of Group III-V Nitride Semiconductors, " Progress in Quantum Electronics, 1996 Vol. 20, Numbers 5 and 6, pp. 361-525
    • (1996) Progress in Quantum Electronics , vol.20 , Issue.5-6 , pp. 361-525
    • Mohammad, S.N.1    Morkoc, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.