Impact of vacancies and self-interstitials on the formation of substitutional transition metal defects in float-zone silicon crystals

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 398-403

  Lemke, H ^a   Zulehner, W ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; POINT DEFECTS;

FLOAT ZONE SILICON CRYSTALS;

SEMICONDUCTING SILICON;

EID: 0033340338     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00490-1     Document Type: Article

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