Kinetic modelling of the selective epitaxy of GaAs on patterned substrates by HVPE. Application to the conformal growth of low defect density GaAs layers on silicon

Materials Research Society Symposium - Proceedings

Volumn 535, Issue , 1999, Pages 33-38

  Gil Lafon, E ^a   Napierala, J ^a   Castelluci, D ^a   Pimpinelli, A ^b   Gerard B ^b   Pribat, D ^b  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CHLORINE; DESORPTION; DISLOCATIONS (CRYSTALS); HYDRIDES; MATHEMATICAL MODELS; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SUBSTRATES; VAPOR PHASE EPITAXY;

DEFECT DENSITY; HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033339784     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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