High-power operation of InGaAsP-InP laser diode array at 1.73 μm

IEEE Photonics Technology Letters

Volumn 9, Issue 10, 1997, Pages 1334-1336

  Skidmore, J A ^a   Freitas, B L ^a   Reinhardt, C E ^a   Utterback, E J ^a   Page, R H ^a   Emanuel, M A ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Semiconductor device fabrication; Semiconductor laser arrays; Semiconductor lasers; Solid state lasers

Indexed keywords

CONTINUOUS WAVE LASERS; HEAT SINKS; HETEROJUNCTIONS; HIGH POWER LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SOLID STATE LASERS;

LASER ARRAYS; SEPARATE CONFINEMENT HETEROSTRUCTURES (SCH);

SEMICONDUCTOR LASERS;

EID: 0031257963     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.623254     Document Type: Article

References (13)

1. T. Y. Fan, G. Huber, R. L. Byer, and P. Mitzscherlich, "Spectroscopy and diode laser-pumped operation of Tm, Ho: YAG," IEEE. J. Quantum. Electron., vol. 24, pp. 924-933, 1988.
2. R. M. Percival, D. Szebesta, C. P. Seltzer, S. D. Perrin, S. T. Davey, and M. Louka, "A 1.6-μm pumped 1.9-μm thulium-doped fluoride fiber laser and amplifier of very high efficiency," IEEE J. Quantum. Electron., vol. 31, pp. 489-493, 1995.
3. H. Moreira, M. Campos, M. Sawusch, J. M. McDonnell, B. Sand, and P. J. McDonnell, "Holmium laser thermokeratoplasty," Ophthalmol., vol. 100, pp. 752-761, 1993.
4. H. K. Choi, G. W. Turner, and S. J. Eglash, "High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 μm," IEEE Photon. Technol. Lett., vol. 6, pp. 7-9, 1994.
5. 2+-doped zinc chalcogenides as efficient, widely tunable mid-infrared lasers," IEEE J. Quantum. Electron., vol. 33, pp. 609-619, 1997.
6. J. A. Curcio and C. C. Petty, "The near infrared absorption spectrum of liquid water," J. Opt. Soc. Amer., vol. 41, pp. 302-304, 1951.
7. M. V. Zolotarev, B. A. Mikhailov, L. I. Alperovich, and S. I. Popov, "Dispersion and absorption of liquid water in the infrared and radio region of the spectrum," Opt. Spectrosc., vol. 27, pp. 430-432, 1969.
8. R. W. H. Engelmann, C.-L. Shieh, and C. Shu, "Multiquantum well lasers: Threshold considerations," in Quantum Well Lasers, P. Zory, Ed. 1993, ch. 3, pp. 72-78, 131-188, 329-352.
9. P. J. A. Thijs, L. F. Tiemeijer, J. J. M. Binsma, and T. van Dongen, "Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers," IEEE J. Quantum Electron., vol. 30, pp. 477-499, 1994.
10. S. O'Brien, W. Plano, J. Major, D. F. Welch, and T. Tally, "Operation of strained-layer diode laser bars at 1.94 μm to 27 W QCW," Electron Lett., vol. 31, pp. 105-106, 1995.
11. R. J. Beach, W. J. Benett, B. L. Freitas, D. Mundinger, B. J. Comaskey, R. W. Solarz, and M. A. Emanuel, "Modular microchannel cooled heatsinks for high average power laser diode arrays," IEEE J. Quantum Electron., vol. 28, pp. 966-976, 1992.
12. P. M. Smowton and P. Blood, "On the determination of internal optical mode loss of semiconductor lasers," Appl. Phys. Lett., vol. 70, pp. 2365-2367, 1997 (and references within).
13. 2+ lasers," in CLEO'97, Baltimore, MD, May 1997, paper CThT6.