Organometallic chemical vapor deposition of V-groove InGaAs/GaAs quantum wires incorporated in planar Bragg microcavities

Journal of Crystal Growth

Volumn 207, Issue 3, 1999, Pages 161-173

  Constantin, C ^a   Martinet, E ^a   Rudra, A ^a   Leifer, K ^a   Lelarge, F ^a   Biasiol, G ^a   Kapon, E ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; ELECTRONS; EXCITONS; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL PROPERTIES; PHOTONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; STRAIN;

PLANAR BRAGG MICROCAVITIES; QUANTUM CONFINEMENT;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0033336996     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00361-9     Document Type: Article

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