In situ HDP-CVD process diagnostics based on quadrupole mass spectrometry

1999 IEEE International Symposium on Semiconductor Manufacturing, ISSM 1999 - Conference Proceedings

Volumn , Issue , 1999, Pages 209-212

  Hughes, C ^a   Van Hoeymissen, J A B ^a   Heyns, M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

MANUFACTURE; PROCESS MONITORING; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTROMETRY; FILM GROWTH; MASS SPECTROMETRY; OXIDES; PLASMA APPLICATIONS; PLASMA DENSITY; SEMICONDUCTING FILMS; SILICON WAFERS;

CHEMICAL CONTENT; DEPOSITED OXIDES; GAS-PHASE REACTANTS; MANUFACTURING ISSUE; OXIDE THICKNESS; PHYSICAL AND CHEMICAL PROPERTIES; QUADRUPOLE MASS SPECTROMETRY; SIGNAL INTENSITIES;

MASS SPECTROMETRY; CHEMICAL VAPOR DEPOSITION;

QUADRUPOLE MASS SPECTROMETRY (QMS);

EID: 0033336892     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSM.1999.808773     Document Type: Conference Paper

References (3)

1. F. L. Tapp, M. Conroy, R. L. Wise and D. C. Frystak, "In Situ Gas Analysis Iniproves Cluster Tool Contaminatiiin Control," Semiconductor International, pp 117-122, April 1998.
2. E. Mccks, R.S. Larson, P. Ho, C. Apblett, S.M. Han, E. Edelberg and E.S. Aydil, "Motlcling oC SiOz dcposition in high dcnsity plasma reactors and coinparisons of inodcl prcdictioiis with cxperimcntel meesurcments," J. Vuc. Sci. Technol. A, vol. 16(2), pp 544-563, MadApr 1998.
3. M. Schaekcrs, "IMEC internal report on lluorinated oxides", 1997.