DC and RF characteristics of 0.25μm non-recessed gate GaAs P-HEMT fabricated by self-aligned gate process

Electronics Letters

Volumn 34, Issue 14, 1998, Pages 1431-1433

  Yang, Sung Gi ^a   Kim, Dae Hyun ^a   Seo, Kwang Seok ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GATES (TRANSISTOR); OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

GATE LEAKAGE PROBLEM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032117111     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981005     Document Type: Article

References (5)

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2. CAMERON, N.I., TAYLOR, M.R.S., MCLELLAND, H., HOLLNAD, M., YHAYNE, I.G., ELGAID, K., and BEAUMONT, S.P.: 'A high performance, high yield, dry-etched pseudomorphic HEMT for W-band use'. IEEE MTT-S Dig., 1995, pp. 435-438
3. SAMOTO, N., MARINO, Y., ONDA, K., MIZUKI, E., and ITOH, T.: 'Novel electron-beam exposure technique for 0.1 mm T-shaped gate fabrication', J. Vac. Sci. Tech. B. 1990, 8, pp. 1335-1338
4. MARSHALL, E.D., ZHANG, B., WANG, L.C., JIAO, P.E., CHEN, W.X., SAWADA, T., LAU, S.S., KAVANAGH, K.L., and KUECH, T.F.: 'Non-alloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge', J. Appl. Phys., 1987, 62, pp. 942-947
5. SHEN, T.C., GAO, G.B., and MORKOC, H.: 'Recent developments in ohmic contacts for III-V compound semiconductors', J. Vac. Sci. Tech. B, 1992, 10, pp. 2113-2132