Effect of stray capacitances in a multiple-tunnel junction memory device

Physica B: Condensed Matter

Volumn 272, Issue 1-4, 1999, Pages 92-95

  Jalil, M B A ^a   Wagner, M ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; GIBBS FREE ENERGY; SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS;

MULTIPLE TUNNEL JUNCTIONS (MTJ) TRAP MEMORY DEVICES; STRAY CAPACITANCE;

SEMICONDUCTOR STORAGE;

EID: 0033330795     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00251-3     Document Type: Article

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