Retention time in multiple-tunnel junction memory device

Journal of Applied Physics

Volumn 85, Issue 2, 1999, Pages 1203-1210

  Jalil, M B A ^a   Wagner, M ^b   Ahmed, H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005090574     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369246     Document Type: Article

References (7)

1. See, for example, Single Charge Tunneling, edited by H. Grabert and M. H. Devoret (Plenum, New York, 1992).
2. K. Nakazato, R. J. Blaikie, and H. Ahmed, J. Appl. Phys. 75, 5123 (1994).
3. D. V. Averin and A. A. Odintsov, Phys. Lett. A 140, 251 (1989).
4. H. D. Jensen and J. M. Martinis, Phys. Rev. B 46, 13407 (1992).
5. L. R. C. Fonseca, A. N. Korotkov, K. K. Likharev, and A. A. Odintsov, J. Appl. Phys. 78, 3238 (1995).
6. D. V. Averin and K. K. Likharev, in Mesoscopic Phenomena in Solids, edited by B. Altshuler (Elsevier, Amsterdam, 1991), p. 173.
7. J. R. Tucker, J. Appl. Phys. 72, 4399 (1992).