Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles

Materials Letters

Volumn 41, Issue 5, 1999, Pages 229-233

  Park, Minseo ^a   Camphausen, S M ^a   Myers, A F ^a   Barletta, P T ^a   Sakhrani, V ^a   Bergman, L ^a   Nemanich, R J ^a   Cuomo, Jerome J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; FILM PREPARATION; RAMAN SCATTERING; SEMICONDUCTING SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

FILTERED CATHODIC ARC DEPOSITION (FCAD);

AMORPHOUS FILMS;

EID: 0033330471     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(99)00135-4     Document Type: Article

References (21)

1. Wagal S.S., Juengerman E.M., Collins C.B. Appl. Phys. Lett. 53:1988;187.
2. Pappas D.L., Saenger K.L., Bruley J., Krakow W., Cuomo J.J., Gu T., Collins R. J. Appl. Phys. 71:1992;5675.
3. Cuomo J.J., Doyle J.P., Bruley J., Liu J.C. J. Vac. Sci. Technol., A. 9:1991;2210.
4. Cuomo J.J., Doyle J.P., Bruley J., Liu J.C. Appl. Phys. Lett. 58:1991;466.
5. Lossy R., Pappas D.L., Roy R.A., Cuomo J.J., Sura V.M. Appl. Phys. Lett. 61:1992;171.
6. Martin P.J., Filipczuk S.W., Netterfield R.P., Field J.S., Whitnall D.F., McKenzie D.R. J. Mater. Sci. Lett. 7:1988;410.
7. Cuomo J.J., Pappas D.L., Lossy R., Doyle J.P., Bruley J., Di Bello G.W., Krakow W. J. Vac. Sci. Technol., A. 10:1992;3414.
8. Camphausen S.M., Myers A.F., Bozeman S.P., Baldwin D.A., Cuomo J.J. Mater. Res. Soc. Symp. Proc. 498:1998;135.
9. Tuinstra F., Koenig J.L. J. Chem. Phys. 53:1970;1126.
10. Nemanich R.J., Solin S.A. Phys. Rev. B. 20:1979;392.
11. Richter A., Scheibe H.-J., Pompe W., Brzezinka K.-W., Mühling I. J. Non-Cryst. Solids. 88:1986;131.
12. Prawer S., Nugent K.W., Lifshitz Y., Lempert G.D., Grossman E., Kulik J., Avigal I., Kalish R. Diamond Relat. Mater. 5:1996;433.
13. M. Geis, M.A. Tamor, in: G. Trigg (Ed.), Encyclopedia of Applied Physics, Vol. 15, VCH, 1993.
14. Gilkes K.W.R., Sands H.S., Batchelder D.N., Robertson J., Milne W.I. Appl. Phys. Lett. 70:1997;1980.
15. Yoshikawa M., Katagiri G., Ishida H., Ishitani A., Akamatsu T. Appl. Phys. Lett. 52:1988;1639.
16. Wagner J., Ramseiner M., Wild C., Koidl P. Phys. Rev. B. 40:1989;1817.
17. Ramsteiner M., Wagner J. Appl. Phys. Lett. 51:1987;1355.
18. Bruley J., Williams D.B., Cuomo J.J., Pappas D.P. J. Microsc. 180:1995;22. Part 1.
19. Messier R., Giri A.P., Roy R. J. Vac. Sci. Technol., A. 2:1984;500.
20. Nieuwenhuizen J.M., Haanstra H.B. Philips Tech. Rev. 27:1966;87.
21. Ding M.Q., Myers A.F., Choi W.B., Vispute R.D., Camphausen S.M., Narayan J., Cuomo J.J., Hren J.J. J. Vac. Sci. Technol. B. 15:1997;840.