Investigation of morphology and fractal behaviour on compound semiconductor surface after electrochemical layer removal

Microelectronics Reliability

Volumn 39, Issue 10, 1999, Pages 1505-1509

  Nemcsics, Ákos ^a   Mojzes, Imre ^b   Dobos, László ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLYTES; ETCHING; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACES;

COMPOUND SEMICONDUCTOR SURFACE; ELECTROCHEMICAL LAYER REMOVAL; SURFACE PATTERN;

SEMICONDUCTOR MATERIALS;

EID: 0033330077     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00185-7     Document Type: Article

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