TED analysis of the Si(113) surface structure

Surface Science

Volumn 438, Issue 1-3, 1999, Pages 76-82

  Suzuki, T ^a   Minoda, H ^a   Tanishiro, Y ^a   Yagi, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COOLING; CRYSTAL ATOMIC STRUCTURE; ELECTRON DIFFRACTION; ELECTRON ENERGY LEVELS; INTERFACIAL ENERGY; MATHEMATICAL MODELS; NICKEL; ORDER DISORDER TRANSITIONS; SURFACE STRUCTURE; SURFACES; TEMPERATURE;

DOBROWSKI MODEL; ENERGY OPTIMIZED ATOMIC POSITIONS; HIGH INDEX SURFACE; RELIABILITY FACTORS;

SEMICONDUCTING SILICON;

EID: 0033327640     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00554-3     Document Type: Article

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