메뉴 건너뛰기




Volumn 46, Issue 6 PART 2, 1999, Pages 1943-1947

Analysis and characterisation of the confining mechanism of the controlled-drift detector

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; ELECTRONS; PERTURBATION TECHNIQUES; THREE DIMENSIONAL; X RAYS;

EID: 0033324562     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819259     Document Type: Article
Times cited : (4)

References (5)
  • 1
    • 0031257245 scopus 로고    scopus 로고
    • Conception and Design Criteria of a Novel Silicon Device for the Measurement of Position and Energy of X-Rays
    • Oct.
    • A.Castoldi, C.Guazzoni, E.Gatti, A.Longoni, P.Rehak, L.Strüder, "Conception and Design Criteria of a Novel Silicon Device for the Measurement of Position and Energy of X-Rays," IEEE Trans. Nucl. Science, vol. 44, pp. 1724-1732, Oct. 1997.
    • (1997) IEEE Trans. Nucl. Science , vol.44 , pp. 1724-1732
    • Castoldi, A.1    Guazzoni, C.2    Gatti, E.3    Longoni, A.4    Rehak, P.5    Strüder, L.6
  • 3
    • 0030214028 scopus 로고    scopus 로고
    • A New Silicon Drift Detector with Reduced Lateral Diffusion
    • Aug.
    • A.Castoldi, P.Rehak, P.Holl, "A New Silicon Drift Detector with Reduced Lateral Diffusion," Nucl. Instr. and Meth., vol. A377, pp. 375-380, Aug. 1996.
    • (1996) Nucl. Instr. and Meth. , vol.A377 , pp. 375-380
    • Castoldi, A.1    Rehak, P.2    Holl, P.3
  • 4
    • 0031249401 scopus 로고    scopus 로고
    • Thermoionic-Emission-Based Barrier Height Analysis for Precise estimation of Charge Handling Capacity in CCD Registers
    • Oct.
    • S.Kawai, N.Mutoh, N.Teranishi, "Thermoionic-Emission-Based Barrier Height Analysis for Precise estimation of Charge Handling Capacity in CCD Registers," IEEE Trans. on Electron Devices, vol. 44, pp 1588-1592, Oct. 1997.
    • (1997) IEEE Trans. on Electron Devices , vol.44 , pp. 1588-1592
    • Kawai, S.1    Mutoh, N.2    Teranishi, N.3
  • 5
    • 0029699280 scopus 로고    scopus 로고
    • Determination of Charge Handling Capability of a Deep Depletion Charge Coupled Device Based on a Three-Dimensional Numerical Simulation
    • M.H.Kim, "Determination of Charge Handling Capability of a Deep Depletion Charge Coupled Device Based on a Three-Dimensional Numerical Simulation," 'in SPIE Proc., 1996, vol. 2654, pp. 51-62.
    • (1996) SPIE Proc. , vol.2654 , pp. 51-62
    • Kim, M.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.