Effects of impurities on gamma-irradiated silicon crystal examined by photovoltaic effect of p-n junction diode

Japanese Journal of Applied Physics

Volumn 11, Issue 7, 1972, Pages 1016-1023

  Yamaguchi, Masafumi ^a   Nagai, Osamu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33846275425     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.11.1016     Document Type: Article

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