Defects in thick epitaxial GaAs layers

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 997-1002

  Samic, H ^a,b   Bourgoin, J C ^a  

^a UNIVERSITÉ PARIS DESCARTES   (France)

^b Saobracajni Fakultet   (Bosnia and Herzegovina)

Author keywords

EL2; GaAs; Growth; Hall effect; IR absorption; Luminescence; SIMS; VPE

Indexed keywords

HALL EFFECT; INFRARED SPECTROSCOPY; PHOTOLUMINESCENCE; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

CLOSE SPACE VAPOR TRANSPORT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031355764     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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