Fabrication of ta2o5 thin films by anodic oxidation of tantalum nitride and tantalum suicide: growing mechanisms, electrical characterization and ulsi m-i-m capacitor performances

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 371-378

  Duenas, S ^a   Castan, H ^a   Barbolla, J ^b   Kola, R R ^a   Sullivan, P A ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANODIC OXIDATION; CAPACITORS; DENSITY (SPECIFIC GRAVITY); ELECTRIC BREAKDOWN; ELECTRODES; FILM PREPARATION; LEAKAGE CURRENTS; MIM DEVICES; STOICHIOMETRY; TANTALUM COMPOUNDS; ULSI CIRCUITS;

TANTALUM NITRIDE; TANTALUM OXIDES; TANTALUM SILICIDE;

THIN FILMS;

EID: 0033323095     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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