Epitaxial growth of zinc-blende ain by plasma source molecular beam epitaxy

Materials Research Society Symposium - Proceedings

Volumn 570, Issue , 1999, Pages 297-302

  Thompson, Margarita P ^a,b,c   Auner, Gregory W ^a,b,c   Drews, Andrew R ^a,b,c   Zheleva, Tsvetanka S ^a,b,c   Jones, Kenneth A ^a,b,c  

^a WAYNE STATE UNIVERSITY   (United States)

^b FORD MOTOR COMPANY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; DEPOSITION; EPITAXIAL GROWTH; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; ZINC;

PLASMA SOURCE MOLECULAR BEAM EPITAXY; PULSE DC POWER;

SEMICONDUCTING FILMS;

EID: 0033322596     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-570-297     Document Type: Article

References (8)

1. S. Strite and H. Morkoç, J. Vac. Sei. Technol. B 10 (1992) 1237.
2. L. B. Rowland, R. S. Kern, S. Tanaka, and Robert F. Davis, J. Mater. Res. 8 (1993) 2310.
3. Petrov, E. Mojab, R. C. Powell, J. E. Greene, L. Hultman, and J. -E. Sundgren, Appl. Phys. Lett. 60 (1992) 2491.
4. H. Okumura, K. Ohta, G. Feuillet, K. Balakrishnan, S. Chichibu, H. Hamaguchi, P. Hacke, S. Yoshida, J. of Cryst. Growth 178 (1997) 113.
5. R. C. Powell, N. -E. Lee, Y. -W. Kim, and J. E. Greene, J. Appl. Phys. 73 (1993) 189.
6. S. Strite, D. Chandrasekhar, David J. Smith, J. Sariel, H. Chen, N. Teraguchi, and H. Morkoç, J. of Cryst. Growth 127 (1993) 204.
7. M. E. Sherwin, and T. J. Drummond, J. Appl. Phys. 69 (1991) 8423.
8. G. W. Auner, T. D. Lenane, F. Ahmad, R. Naik, P. K. Kuo, and Z. Wu, in Wide Band Gap Electronic Materials edited by M. A. Prelas et al. (Kluwer Academic Publishers, Netherlands, 1995).