Scanning probe microscopy (SPM) for the investigation of local electrical properties of high-K dielectric/ferroelectric films

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 567-572

  Landau, S A ^a   Weiss P A ^a   Junghans, N ^a   Kolbesen, B O ^a   Adderton, D ^a   Schindler, G ^a   Hartner, W ^a   Hintermaier, F ^a   Dehm, C ^a   Mazure C ^a  

^a GOETHE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CMOS INTEGRATED CIRCUITS; CRYSTAL MICROSTRUCTURE; DIELECTRIC FILMS; ELECTRIC FIELD EFFECTS; FERROELECTRIC MATERIALS; GRAIN BOUNDARIES; LEAKAGE CURRENTS; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY;

ELECTROSTATIC FORCE MICROSCOPY; HIGH DENSITY CMOS TECHNOLOGY; SCANNING PROBE MICROSCOPY;

THIN FILMS;

EID: 0033322481     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-567     Document Type: Conference Paper

References (6)

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