Diamond growth by hollow cathode arc chemical vapor deposition at low pressure range of 0.02-2 mbar

Diamond and Related Materials

Volumn 8, Issue 12, 1999, Pages 2148-2151

  Zhang, G F ^a   Buck, V ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Diamond films; Hollow cathode arc; Low pressure

Indexed keywords

CATHODE RAYS; CHEMICAL VAPOR DEPOSITION; ELECTRON BEAMS; GRAPHITE; PLASMAS; PRESSURE EFFECTS; REACTION KINETICS; SEMICONDUCTING SILICON; SUBSTRATES; SYNTHESIS (CHEMICAL); TUNGSTEN;

HOLLOW CATHODE ARCS;

DIAMOND FILMS;

EID: 0033322049     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(99)00179-x     Document Type: Article

References (15)

1. Singh R.K., Gilbert D., Tellshow R., Holloway P.H., Ochoa R., Simmons J.H., Koba R. Appl. Phys. Lett. 61:1992;2863.
2. Gilbert D.R., Singh R., Clarke R., Murugkar S. Appl. Phys. Lett. 70:1997;1974.
3. Eddy C.R., Youchison D.L., Sartwell B.D. Diamond Relat. Mater. 3:1994;105.
4. Gilbert D.R., Lee D.-G., Singh R.K. J. Mater. Res. 13:1998;1735.
5. Singh R.K., Gilbert D.R., Fitz-Gerald J., Harkness S., Lee D.G. Science. 272:1996;396.
6. Lee S.T., Lam Y.W., Lin Z., Chen Y., Chen Q. Phys. Rev. B. 55:1997;15937.
7. Ferreira C.M., Delcroix J.L. J. Appl. Phys. 49:1978;2380.
8. Tzeng Y., Kung P.J., Zee R. Appl. Phys. Lett. 53:1988;2326.
9. Kung P.J., Tzeng Y. J. Appl. Phys. 66:1989;4676.
10. Singh B., Mesker O.R., Levine A.W., Arie Y. Appl. Phys. Lett. 52:1988;1658.
11. Liang G.-T., Hong F.C-N. Jpn. J. Appl. Phys. 36:1997;L1406.
12. Liang G-T., Hong F.C-N. J. Mater. Res. 13:1998;3114.
13. Stiegler J., Roth S., Hammer K., Scharff W. Thin Solid Films. 4:1992;219.
14. Stiegler J., Roth S., Hammer K., Stenzel O., Mainz B., Scharff W. Diamond Relat. Mater. 2:1993;413.
15. Whang K.W., Seo Y.W. J. Vac. Sci. Technol. A. 11:1993;1496.