Emission of silicon clusters by high-density excitation

Surface Science

Volumn 433, Issue , 1999, Pages 890-895

  Yamamoto, Hiroyuki ^a   Baba, Yuji ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ION BOMBARDMENT; KINETIC ENERGY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; YIELD STRESS;

CLUSTER EMISSION; ION SOLID INTERACTIONS; RELATIVE CLUSTER YIELDS; SEMICONDUCTING SURFACES; SILICON CLUSTER IONS;

ELECTRON EMISSION;

EID: 0033321987     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00471-9     Document Type: Article

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