High-speed and high-power 1.3 μm InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 A, 1999, Pages 6729-6731

  Zhang, Baijun ^a   Yi, Maobin ^b   Song, Junfeng ^b   Gao, Dingsan ^b   Zhu, Ninghua ^a   Wu, Ronghan ^a   Wang, Wei ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

Heterostructure; MOCVD; Modulation bandwidth; Proton bombardment; Semiconductor laser

Indexed keywords

ATTENUATION; BANDWIDTH; CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; HETEROJUNCTIONS; ION BOMBARDMENT; LIGHT MODULATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PROTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

CURRENT BLOCKING STRUCTURES; MODULATION BANDWIDTH; OPTICAL FIELD ATTENUATION REGIONS; PROTON BOMBARDMENT; SELECTIVE PROTON BOMBARDED BURIED CRESCENT LASERS;

SEMICONDUCTOR LASERS;

EID: 0033320341     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6729     Document Type: Article

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