Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes

Applied Physics Letters

Volumn 68, Issue 9, 1996, Pages 1186-1188

  Berishev, I E ^a   Gorbachev, A Yu ^a   Mishournyi, V A ^a   Ilyinskaya, N D ^b   Stankevich, A L ^b   Tarasov, I S ^b  

^a INSTITUTO DE INVESTIGACIÓN EN COMUNICACIÓN ÓPTICA   (Mexico)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITANCE; ELECTRIC CURRENTS; LASER RESONATORS; LIQUID PHASE EPITAXY; MODULATION; POLYIMIDES; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL CONDUCTIVITY;

BURIED HETEROSTRUCTURES; CURRENT CONFINEMENT LAYERS; INDIUM GALLIUM ARSENIC PHOSPHIDE; LIGHT CURRENT CHARACTERISTICS; MODULATION BANDWIDTH;

QUANTUM WELL LASERS;

EID: 0030084360     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115963     Document Type: Article

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