Formation of single domain Si(001)4 × 3-In surface by surface electromigration

Surface Science

Volumn 438, Issue 1-3, 1999, Pages 83-90

  Kono, S ^a   Goto, T ^a   Shimomura, M ^a   Abukawa, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; INDIUM; INTERFACES (MATERIALS); MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE PHENOMENA; THERMAL EFFECTS;

METAL SEMICONDUCTOR INTERFACES; SINGLE DOMAIN; SURFACE ELECTROMIGRATION;

SURFACES;

EID: 0033319463     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00555-5     Document Type: Article

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