SIMS and CL characterization of manganese-doped aluminum nitride films

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 413-418

  Tucceri, R C ^a   Bland, C D ^a   Caldwell, M L ^a   Ervin, M H ^b   Magtoto, N P ^c   Spalding, C M ^a   Wood, M A ^b   Richardson, H H ^a  

^a OHIO UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF NORTH TEXAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DIFFUSION; ELECTRON EMISSION; ENERGY DISPERSIVE SPECTROSCOPY; MANGANESE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THIN FILMS;

ALUMINUM NITRIDE; EMISSION BANDS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0033313768     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-413     Document Type: Conference Paper

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