Stress-tuned metal-insulator transition in Si:B: dynamical scaling

Annalen der Physik (Leipzig)

Volumn 8, Issue 7, 1999, Pages 639-647

  Bogdanovich, S ^a,c   Sarachik, M P ^a   Bhatt, R N ^b  

^a CITY COLLEGE OF NEW YORK   (United States)

^b Princeton University   (United States)

^c FLORIDA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY; QUANTUM THEORY; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; STRESSES; THERMAL EFFECTS;

COULOMB INTERACTIONS; CRITICAL DENSITY; DISORDERED SOLIDS; DOPANT CONCENTRATION; DYNAMIC SCALING; FINITE TEMPERATURE SCALING; METAL INSULATOR TRANSITIONS;

PHASE TRANSITIONS;

EID: 0033312747     PISSN: 00033804     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3889(199911)8:7/9<639::AID-ANDP639>3.0.CO;2-B     Document Type: Article

References (40)

1. M. A. Paalanen, T. F. Rosenbaum, G. A. Thomas, and R. N. Bhatt, Phys. Rev. Lett. 48 (1982) 1284
2. G. Hertel, D. J. Bishop, E. G. Spencer, J. M. Rowell and R. C. Dynes, Phys. Rev. Lett. 50 (1983) 743; D. J. Bishop, E. G. Spencer, and R. C. Dynes, Solid-State Electron. 28 (1985) 73
3. G. Hertel, D. J. Bishop, E. G. Spencer, J. M. Rowell and R. C. Dynes, Phys. Rev. Lett. 50 (1983) 743; D. J. Bishop, E. G. Spencer, and R. C. Dynes, Solid-State Electron. 28 (1985) 73
4. G. A. Thomas, Y. Ootuka, S. Katsumoto, S. Kobayashi and W. Sasaki, Phys. Rev B 25 (1982) 4288
5. P. F. Newman and D. F. Holcomb, Phys. Rev. B 28 (1983) 638; W. N. Shafarman, D. W. Koon and T. G. Castner, Phys. Rev. B 40 (1989) 1216
6. P. F. Newman and D. F. Holcomb, Phys. Rev. B 28 (1983) 638; W. N. Shafarman, D. W. Koon and T. G. Castner, Phys. Rev. B 40 (1989) 1216
7. P. F. Newman and D. F. Holcomb, Phys. Rev. Ltt. 51 (1983) 2144
8. T. F. Rosenbaum, K. Andres, G. A. Thomas and R. N. Bhatt, Phys. Rev. Lett. 45 (1980) 1723
9. I. Shlimak, M. Kaveh, R. Ussyshkin, V. Ginodman, and L. Resnick, Phys. Rev. Lett. 77 1103 (1996) 1103
10. P. Dai, Y. Zhang, and M. P. Sarachik, Phys. Rev. Lett. 66 (1991) 1914; Phys. Rev. B 45 (1992) 3984
11. P. Dai, Y. Zhang, and M. P. Sarachik, Phys. Rev. Lett. 66 (1991) 1914; Phys. Rev. B 45 (1992) 3984
12. P. Dai, Y. Zhang, S. Bogdanovich, and M. P. Sarachik, Phys. Rev. Lett 66 (1991) 1914; Phys. Rev. B 48 (1993) 4941
13. P. Dai, Y. Zhang, S. Bogdanovich, and M. P. Sarachik, Phys. Rev. Lett 66 (1991) 1914; Phys. Rev. B 48 (1993) 4941
14. H. Stupp, M. Hornung, M. Lakner, O. Madel, and H. v. Lohneysen, Phys. Rev. Lett. 71 (1993) 2634
15. K. M. Itoh, E. E. Haller, J. W. Beeman, W. L. Hansen, J. Emes, L. A. Reichertz, E. Kreysa, T. Shutt, A. Cummings, W. Stockwell, B. Sadoulet, J. Muto, J. W. Farmer, and V. I. Ozhogin, Phys. Rev. Lett. 77 (1996) 4058
16. S. Bogdanovich, M. P. Sarachik, and R. N. Bhatt, Phys. Rev. Lett. 82 (1999) 137, Phys. Rev. Lett. (1983) 755
17. S. Bogdanovich, M. P. Sarachik, and R. N. Bhatt, Phys. Rev. Lett. 82 (1999) 137, Phys. Rev. Lett. (1983) 755
18. 1/3 first reported in n-type GaAs by M. Maliepaard, M. Pepper, R. Newbury, J. E. F. Frost, D. C. Peacock, D. A. Ritchie, G. A. C. Jones, and G. Hill, Phys. Rev. B 39 (1989) 1430
19. 1/3 first reported in n-type GaAs by M. Maliepaard, M. Pepper, R. Newbury, J. E. F. Frost, D. C. Peacock, D. A. Ritchie, G. A. C. Jones, and G. Hill, Phys. Rev. B 39 (1989) 1430
20. For a review of scaling theories, see D. Belitz and T. Kirkpatrick, Rev. Mod. Phys. 66 (1994) 261
21. H. Stupp, M. Hornung, M. Lakner, O. Madel, and H. v. Lohneysen, Phys. Rev. Lett. 72 (1994) 2122(C)
22. S. Waffenschmidt, C. Pfleiderer, and H. v. Lohneysen, cond-mat/9905297
23. S. Bogdanovich, Ph.D. Thesis, City College of CUNY, New York 1998
24. J. A. Chroboczek, F. H. Pollak, and H. F. Staunton, Phil. Mag. B 50 (1984) 113
25. R. N. Bhatt, Phys. Rev. B 26 (1982) 1082
26. 1/2-dependence of the conductivity at the critical value of the tuning parameter has been calculated for the case with strong spin-orbit scattering by C. Castellani, C. Di Castro, G. Forgacs and S. Sorella, Solid State Commun. 52 (1984) 261
27. F. Wegner, Z. Phys. B 25 (1975) 327
28. B. L. Altshuler and A. G. Aronov, Zh. Eksp. Teor. Fiz. 77 (1979) 2028 [Sov. Phys. JETP 50 (1979) 968; Pisma Zh. Eksp. Teor. Fiz. 30 (1979) 514 [Sov. Phys. JETP Lett. 30 (1979) 514; Solid State Commun. 46 (1983) 429
29. B. L. Altshuler and A. G. Aronov, Zh. Eksp. Teor. Fiz. 77 (1979) 2028 [Sov. Phys. JETP 50 (1979) 968; Pisma Zh. Eksp. Teor. Fiz. 30 (1979) 514 [Sov. Phys. JETP Lett. 30 (1979) 514; Solid State Commun. 46 (1983) 429
30. B. L. Altshuler and A. G. Aronov, Zh. Eksp. Teor. Fiz. 77 (1979) 2028 [Sov. Phys. JETP 50 (1979) 968; Pisma Zh. Eksp. Teor. Fiz. 30 (1979) 514 [Sov. Phys. JETP Lett. 30 (1979) 514; Solid State Commun. 46 (1983) 429
31. B. L. Altshuler and A. G. Aronov, Zh. Eksp. Teor. Fiz. 77 (1979) 2028 [Sov. Phys. JETP 50 (1979) 968; Pisma Zh. Eksp. Teor. Fiz. 30 (1979) 514 [Sov. Phys. JETP Lett. 30 (1979) 514; Solid State Commun. 46 (1983) 429
32. B. L. Altshuler and A. G. Aronov, Zh. Eksp. Teor. Fiz. 77 (1979) 2028 [Sov. Phys. JETP 50 (1979) 968; Pisma Zh. Eksp. Teor. Fiz. 30 (1979) 514 [Sov. Phys. JETP Lett. 30 (1979) 514; Solid State Commun. 46 (1983) 429
33. P. A. Lee and T. V. Ramakrishnan, Rev. Mod. Phys. 57 (1985) 287
34. S. Bogdanovich, M. P. Sarachik, and R. N. Bhatt, Phys. Rev. B 60 (1999) 2292
35. N. F. Mott, J. Non-Cryst. Solids 1 (1968) 1
36. B. I. Shklovskii and A. L. Efros Electronic Properties of Doped Semiconductors, Solid State Series Vol. 45, Springer-Verlag, Berlin 1984
37. Y. Zhang, P. Dai, M. Levy, and M. P. Sarachik, Phys. Rev. Lett. 64 (1984) 2687
38. N. V. Agrinskaya and A. N. Aleshin, Fiz. Tverd. Tela (Leningrad) 31 (1989) 227 [Sov. Phys. Solid State bf 31 (1989) 1996]
39. N. V. Agrinskaya and A. N. Aleshin, Fiz. Tverd. Tela (Leningrad) 31 (1989) 227 [Sov. Phys. Solid State bf 31 (1989) 1996]
40. S. Bogdanovich, D. Simonian, S. V. Kravchenko, M. P. Sarachik, and R. N Bhatt, Phys. Rev. B 60 (1999) 2286