Conductivity of metallic si:b near the metal-insulator transition: comparison between unstressed and uniaxially stressed samples

Physical Review B - Condensed Matter and Materials Physics

Volumn 60, Issue 4, 1999, Pages 2292-2298

  Bhatt, R N ^b   Sarachik, M P ^a  

^a CITY COLLEGE OF NEW YORK   (United States)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4244186079     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.2292     Document Type: Article

References (41)

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32. Data for the stress closest to the critical value (Formula presented) were not included in the fit. The slope (Formula presented) for the (Formula presented) curve is smaller and atypical, due possibly to inhomogeneous distribution of stress resulting in insulating behavior for some regions of the sample.
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41. It should also be mentioned that the exponent for the Anderson localization transition for noninteracting electrons in three dimensions is also close to 1.6 [see, e.g., K. Slevin and T. Ohtsuki, Phys. Rev. Lett. 78, 4083 (1997)]. However, there is considerable evidence for electron interaction effects in both the insulating and metallic phases in Si:B; see, for example, Ref. 18.