Hot carrier scaling of localization in a quantum dot array

Physica B: Condensed Matter

Volumn 272, Issue 1-4, 1999, Pages 49-52

  Lin, L H ^a   Aoki, N ^a   Nakao, K ^a   Andresen, A ^b   Prasad, C ^b   Ge, F ^b   Bird, J P ^b   Ferry, D K ^b   Ochiai, Y ^a   Ishibashi, K ^c   Aoyagi, Y ^c   Sugano, T ^c  

^a CHIBA UNIVERSITY   (Japan)

^b ARIZONA STATE UNIVERSITY   (United States)

^c RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; ENERGY GAP; GATES (TRANSISTOR); HETEROJUNCTIONS; HOT CARRIERS; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

CARRIER RELAXATION; HOT CARRIER SCALING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033310743     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00345-2     Document Type: Article

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