Structure and missing-dimer probability distribution of the (2 × n) Bi-induced Si (001) surface

Surface Science

Volumn 433-435, Issue , 1999, Pages 367-372

  Jedrecy, N ^a,b   Gavioli, L ^c   Mariani, C ^c   Corradini, V ^c   Betti, M G ^c   Croset, B ^d   De Beauvais, C ^d  

^a UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d CNRS   (France)

Author keywords

Bismuth; Photoemission; Silicon; Surface structure; X ray diffraction

Indexed keywords

ADSORPTION; ANNEALING; BISMUTH; ELECTRON ENERGY LEVELS; PHOTOELECTRON SPECTROSCOPY; PROBABILITY DISTRIBUTIONS; SEMICONDUCTING SILICON; X RAY DIFFRACTION ANALYSIS;

GRAZING INCIDENCE X RAY DIFFRACTION; PHASE MATRIX METHOD;

SURFACE STRUCTURE;

EID: 0033308884     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00108-9     Document Type: Article

References (11)

1. M. Katayama, T. Nakayama, M. Aono, C.F. McConville, Phys. Rev. B 54 (1996) 8600.
2. T. Hanada, M. Kawai, Surf. Sci. 242 (1991) 137.
3. H.K. Louwsma, H.J.W. Zandvliet, B.A.G. Kersten, J. Chesneau, A. van Silfhout, B. Poelsema, Surf. Sci. 381 (1997)
4. H.J.W. Zandvliet, H.K. Louwsma, P.E. Hegeman, B. Poelsema, Phys. Rev. Lett. 75 (1995) 3890.
5. Ch. Park, R.Z. Bakhtizin, T. Hashizume, T. Sakurai, Jpn. J. Apl. Phys. 32 (1993) L528.
6. H.P. Noh, C. Park, D. Jeon, K. Cho, T. Hashizume, Y. Kuk, T. Sakurai, J. Vac. Sci. Technol. B 12 (1994) 2097.
7. P.C. Weakliem, Z. Zhang, H. Metin, Surf. Sci. 336 (1995) 303.
8. S. Tang, A.J. Freeman, Phys. Rev. B 50 (1994) 1701.
9. G.E. Franklin, S. Tang, J.C. Woicik, M.J. Bedzyk, A.J. Freeman, J.A. Golovchenko, Phys. Rev. B 52 (1995) R5515.
10. B. Croset, C. de Beauvais, Surf. Sci. 384 (1997) 15.
11. N. Jedrecy, L. Gravioli, C. Mariani, M.G. Betti, B. Croset, C. de Beauvais, J. Phys.: Cond. Matt. 11 (1999) 1935.