Growth defects associated with MBE deposited GaAs layers

Vacuum

Volumn 55, Issue 3, 1999, Pages 249-253

  Kadhim, N J ^a   Mukherjee, D ^b  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b LONDON SOUTH BANK UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTAL WHISKERS; DEPOSITION; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; TEMPERATURE;

GROWTH RATE; MORPHOLOGICAL DEFECTS; POLYHEDRAL PITS;

GALLIUM COMPOUNDS;

EID: 0033308002     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(99)00163-3     Document Type: Article

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