Light-induced increase in two-level tunneling states in hydrogenated amorphous silicon

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 389-394

  Liu, Xiao ^a   Pohl, R O ^a   Crandall, R S ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELASTICITY; ELECTRONIC DENSITY OF STATES; HYDROGENATION; LATTICE VIBRATIONS; MICROSTRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TEMPERATURE;

HOT WIRE CHEMICAL VAPOR DEPOSITION; LATTICE DISORDER; LOW TEMPERATURE INTERNAL FRICTION; STAEBLER-WRONSKI EFFECT;

AMORPHOUS SILICON;

EID: 0033300180     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-389     Document Type: Article

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