Photoinduced expansion in hydrogenated amorphous silicon

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 337-345

  Nonomura, S ^a   Gotoh, T ^a   Nishio, M ^a   Sakamoto, T ^a   Kondo, M ^a   Matsuda, A ^a   Nitta, S ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTAL DEFECTS; DEGRADATION; HYDROGENATION; LASER APPLICATIONS; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES; TEMPERATURE; THERMAL EFFECTS; THERMAL EXPANSION;

HYDROGENATED AMORPHOUS SILICON; LASER OPTICAL LEVER BENDING METHOD; PHOTODEGRADATION EFFECTS; PHOTOINDUCED DEFECT DENSITY; PHOTOINDUCED EXPANSION; PHOTOTHERMAL EFFECT; RESIDUAL EXPANSION; THERMAL ANNEALING; TIME DEPENDENCE; VOLUME EXPANSION;

THIN FILMS;

EID: 0033298974     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-337     Document Type: Article

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