Characteristics of different thickness a-Si:H/metal schottky barrier cell structures-results and analysis

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 785-790

  Lu, Zhou ^a   Jiao, Lihong ^a   Koval, Randy ^a   Collins, Robert W ^a   Wronski, Christopher R ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; POLYCRYSTALLINE MATERIALS; QUANTUM THEORY; SCHOTTKY BARRIER DIODES; SURFACE STRUCTURE; THIN FILMS;

ANALYSIS OF MICROELECTRONIC AND PHOTONIC STRUCTURES; GAP STATE DISTRIBUTION; METAL SCHOTTKY BARRIER CELL STRUCTURES;

SILICON SOLAR CELLS;

EID: 0033298970     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-785     Document Type: Article

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