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Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 1168-1171

Distribution of charged defects in a:Si-H n-i Schottky barrier solar cells

(4) Liu, Hongyue a Jiao, L a Semoushkina, S a Wronski, C R a

a PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHARACTERIZATION; CHEMICAL BONDS; DEFECTS; ENERGY GAP; MATHEMATICAL MODELS; NICKEL ALLOYS; QUANTUM EFFICIENCY; THERMAL EFFECTS;

ANALYSIS OF MICROELECTRONIC AND PHOTONIC STRUCTURES; BULK DISTRIBUTIONS; CELL STRUCTURES; CHARGED DEFECT DISTRIBUTIONS; CHARGED DEFECTS; GAP STATES; SCHOTTKY BARRIER SOLAR CELLS; SELF CONSISTENCY;

SOLAR CELLS;

EID: 17144471773 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/0022-3093(96)00106-8 Document Type: Article

Times cited : (5)

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