Use of a gas jet technique to prepare microcrystalline silicon based solar cells at high i-layer deposition rates

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 567-572

  Jones, S J ^a   Crucet, R ^a   Deng, X ^a   Doehler, J ^a   Kopf, R ^a   Myatt, A ^a   Tsu, D V ^a   Izu, M ^a  

^a Energy Conversion Devices Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; DEPOSITION; JETS; LIGHT ABSORPTION; MEASUREMENT ERRORS; SILICON ALLOYS; SUBSTRATES; TEMPERATURE; THIN FILMS;

AMORPHOUS SILICON GERMANIUM ALLOY; GAS JET DEPOSITION TECHNIQUE; HETEROGENOUS MICROSTRUCTURES; LIGHT EFFICIENCY; MICROCRYSTALLINE SILICON;

SILICON SOLAR CELLS;

EID: 0033297456     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-567     Document Type: Article

References (6)

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