Real-time strain monitoring in thin film growth: Cubic boron nitride on Si(100)

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 66, Issue 1, 1999, Pages 79-82

  Litvinov, Dmitri ^a,c   Clarke, Roy ^a   Taylor II, Charles A ^b   Barlett, Darryl ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b k Space Associates Inc   (United States)

^c SEAGATE TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUBIC BORON NITRIDE; ELECTRON CYCLOTRON RESONANCE; ENERGY GAP; FILM GROWTH; SEMICONDUCTOR GROWTH; SILICON WAFERS; SPUTTER DEPOSITION; STRAIN MEASUREMENT; STRESS ANALYSIS; THIN FILMS; YIELD STRESS;

IN SITU STRESS CONTROL; WAFER CURVATURE;

SEMICONDUCTING FILMS;

EID: 0033285852     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00128-2     Document Type: Article

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