Influence of accumulation layer on interface trap density extraction

Electronics Letters

Volumn 34, Issue 25, 1998, Pages 2439-2441

  Sonnenberg, V ^a   Martino, J A ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRON TRAPS; INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

ACCUMULATION LAYER EFFECT; INTERFACE TRAP DENSITIES;

MOSFET DEVICES;

EID: 0032267874     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981678     Document Type: Article

References (8)

1. COLINGE, J.P.: 'Silicon on insulator technology: Materials to VLSI' (Kluwer Academic Publishers, 1991), 1st Edn.
2. 2 interface trap density', Solid State Electron., 1992, 35, (3), pp. 345-355
3. BALESTRA, F.: 'Analysis of the dependence of the subthreshold swing and the threshold voltage on the substrate voltage of thin-Film SOI MOSFETs. Extraction of the interface state densities', Solid State Electron., 1992, 35, (12), pp. 1783-1786
4. MAYER, D.C., COLE, R.C., and POLLACK, G.P.: 'Determination of back interface state distribution in fully depleted SOI MOSFETs'. IEDM 91, 1991, pp. 329-332
5. WOUTERS, D.J., COLINGE, J.P, and MAES, H.E.: 'Subthreshold slope in thin-film SOI MOSFETs', IEEE Trans. Electron Devices, 1990, 37, (9), pp. 2022-2033
6. TMA MEDICI, version 2.3.1, Palo Alto, CA, 1996
7. SONNENBERG, V., and MARTINO, J.A.: 'Analysis of the subthreshold slope transition region in SOI nMOSFET. Proc. XI Congress of the Brazilian Microelectronics Society, Águas de Lindóia-SP, 1996, pp. 333-338
8. FRANDRE, D., and VAN DE WIELE, F.: 'A new analytical model for the two-terminal MOS capacitor on SOI sbstrate', IEEE Electron Devices Lett., 1988, 9, (6) pp. 296-299