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Journal of Electronic Materials

Volumn 28, Issue 12, 1999, Pages 1424-1427

Growth and photoreflectance characterization of GaAs impact ionization avalanche transit time diodes

(4) Gaskill, D K a Glembocki, O J a Holm, R T a Giordana, A b

a NAVAL RESEARCH LABORATORY (United States)

b Litton Electro Optical Systems (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; IMPACT IONIZATION; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS;

PHOTOREFLECTANCE SPECTROSCOPY;

IMPATT DIODES;

EID: 0033281290 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-999-0134-7 Document Type: Article

Times cited : (3)

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