Photoluminescence of Be implanted Si-doped GaAs

Journal of Electronic Materials

Volumn 28, Issue 12, 1999, Pages 1466-1470

  Kroon, R E ^a   Botha, J R ^a   Neethling, J H ^a   Drummond, T J ^b  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; BERYLLIUM; CARRIER CONCENTRATION; CRYSTAL DEFECTS; ION IMPLANTATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

VACANCIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033281261     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0143-6     Document Type: Article

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