The influence of Ti capping layers on CoSi2 formation in the presence of interfacial oxide

Materials Research Society Symposium - Proceedings

Volumn 564, Issue , 1999, Pages 139-144

  Detavernier, C ^a   Donaton, R A ^b   Maex, K ^b,c   Jin, S ^b   Bender, H ^b   Van Meirhaeghe, R ^a   Cardon, F ^a  

^a Laboratorium voor Kristallografie en Studie van de Vaste Stof Universiteit Gent   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT; EPITAXIAL GROWTH; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR METAL BOUNDARIES; THERMAL EFFECTS; TITANIUM;

OXIDE MEDIATED EPITAXY (OME); TITANIUM MEDIATED EPITAXY (TIME);

SEMICONDUCTOR JUNCTIONS;

EID: 0033279259     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-564-139     Document Type: Article

References (6)

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