Vertical Bridgman growth and scintillation properties of doped Bi4Si3O12 crystals

Crystal Research and Technology

Volumn 34, Issue 9, 1999, Pages 1149-1156

  Yiting, F ^a   Renying, S ^a   Shiji, F ^a   Jiayue, X ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; EMISSION SPECTROSCOPY; OPTICAL RESOLVING POWER; SCINTILLATION; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

VERTICAL BRIDGMAN METHOD;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 0033276872     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-4079(199911)34:9<1149::AID-CRAT1149>3.0.CO;2-L     Document Type: Article

References (7)

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5. PHILIPSBORN, H. V.: J. Crystal Growth 11 (1971) 348
6. WEI, Z. Y.: Dr. Dissertation (1988, in Chinese)
7. YUAN, H. and YIN, Z. W.: SCINT97, Shanghai, China (1997) p.282