High-throughput, high-spatial-frequency measurement of critical dimension variations using memory circuits as electrical test structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 2707-2713

  Ouyang, X ^a   Deeter, Timothy L ^b   Berglund, C N ^a   McCord, Mark A ^a   Pease, R F W ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033263051     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591050     Document Type: Article

References (5)

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4. L. Han, W. Wang, M. A. McCord, C. N. Berglund, R. F. W. Pease, and L. Suzanne Weaver, J. Vac. Sci. Technol. B 15, 2633 (1997).
5. B. R. Blaes and M. G. Buehler, IEEE Trans. Semicond. Manuf. 7, 319 (1994).