Hydrogen resistant FRAM integration technologies for Pt electrode ferroelectric capacitor

Journal of the Korean Physical Society

Volumn 35, Issue SUPPL. 4, 1999, Pages

  Lee, Sung Yung ^a   Koo, Bon Jae ^a   Jung, Dong Jin ^a   Kim, Kinam ^a   Park, Young Soo ^b   Lee, Jun Ki ^b  

^a SAMSUNG Electronics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033262914     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (3)

1. T. Mihara et al., Jpn. J. Appl. Phys. 1-33, 5281 (1994).
2. Y. Fujisaki et al., J. Appl. Phys. 82, 341 (1997).
3. D. J. Jung et al., 1998 Symp. on VLSI Tech. (1998).