Compression mechanisms in highly anisotropic semiconductors

Physica Status Solidi (B) Basic Research

Volumn 211, Issue 1, 1999, Pages 365-372

  Hsueh, H C ^a   Crain, J ^b  

^a TAMKANG UNIVERSITY   (Taiwan)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ARSENIC COMPOUNDS; CHARGE TRANSFER; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GERMANIUM COMPOUNDS; IV-VI SEMICONDUCTORS; SELENIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; X RAY POWDER DIFFRACTION;

AMBIENT CONDITIONS; COMPRESSION MECHANISM; ELECTRON CHARGE TRANSFER; HYDROSTATIC COMPRESSION; LAYERED MATERIAL; MOLECULAR GROUPS; NON-MONOTONIC VARIATION; STRUCTURE SIMULATIONS;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0033249308     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-3951(199901)211:1<365::aid-pssb365>3.0.co;2-o     Document Type: Article

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