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Volumn 211, Issue 1, 1999, Pages 17-22

Comparability and reliability of high-pressure band-gap data in tetrahedral semiconductors

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Indexed keywords


EID: 0033249267     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199901)211:1<17::AID-PSSB17>3.0.CO;2-2     Document Type: Article
Times cited : (6)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.