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Volumn 211, Issue 1, 1999, Pages 17-22
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Comparability and reliability of high-pressure band-gap data in tetrahedral semiconductors
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0033249267
PISSN: 03701972
EISSN: None
Source Type: Journal
DOI: 10.1002/(SICI)1521-3951(199901)211:1<17::AID-PSSB17>3.0.CO;2-2 Document Type: Article |
Times cited : (6)
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References (13)
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