Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: Recent EPR studies

Physics of the Solid State

Volumn 41, Issue 5, 1999, Pages 783-785

  Baranov, P G ^a   Il'in, I V ^a   Mokhov, E N ^a   Khramtsov, V A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033239363     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1130872     Document Type: Article

References (8)

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2. P. G. Baranov, I. V. Il'in, E. N. Mokhov, A. D. Roenkov, and V. A. Khramtsov, Fiz. Tverd. Tela (St. Petersburg) 39, 52 (1997) [Phys. Solid State 39, 44 (1997)].
3. P. G. Baranov, V. A. Khramtsov, and E. N. Mokhov, Semicond. Sci. Technol. 9, 1340 (1994).
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8. P. G. Baranov, I. V. Il'in, E. N. Mokhov, A. B. Pevtsov, and V. A. Khramtsov, Fiz. Tverd. Tela (St. Petersburg) 41, No. 38 (1999) [Phys. Solid State 41, 32 (1999)].